BSS123 Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
Graphic symbol
These N-Channel enhancement mode field effect
transistors uses advanced trench technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast
switching performance. These products are particularly
suited for low voltage, low current applications such as:
• Small Servo Motor Control
• Power MOSFET Gate Drivers
• Switching Applications
Features
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Totally Lead-Free & Fully RoHS Compliant
• RoHS compliant package
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Alloy 42
Leadframe(Lead Free Plating). Solderable per
MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (Approximate)
Packing & Order Information
3,000/Reel
Publication Order Number: [BSS123]
© Bruckewell Technology Corporation Rev. A -2014