BAS321 Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose diode

BAS321
General Purpose Diode
Features
• Very small plastic SMD package.
• High switching speed:max. 50ns
• Continuous reverse voltage:max.200v
• Repetitive peak reverse voltage:max.250v
• Repetitive peak forward current:max.650mA
• RoHS compliant package
Mechanical Data
• Case: SOD-323 Molded plastic
• Epoxy: UL94V-O rate flame retardant
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (T_A=25°C unless otherwise specified)
Symbol
Parameter
MIN
MAX
Unit
PD(Ta=25°C) Power dissipation
300
mW
IF
Forward Current
250
ma
VR
Reverse Voltage VR
200
V
T_J/T_STG
Junction and Storage Temperature
-55 to +150
°C
V(BR)
Reverse Breakdown Voltage(IR=100uA)
250
--
V
IR
Reverse Leakage Current(VR=200V)
1
uA
Forward Voltage(Test Condition)
VF
IF=100mA
1.0
V
IF=200mA
1.25
CD
Diode Capacitance (VR=0V, f=1MHz)
2
pF
Trr
Reverse Recovery Time
50
nS
Publication Order Number: [BAS321]
© Bruckewell Technology Corporation Rev. A -2014