1SS355 Datasheet, PDF (1/5 Pages) Rohm – Switching diode

1SS355
SILICON EPITAXIAL
HIGH SPEED SWITCHING DIODE
Features
• Smal plastic package suitable for surface mounted
design
• High Speed (Trr = 1.2 ns Typ.)
• High reliability with high surge current handling
capability
• RoHS compliant package
Applications
• High speed switching
Description
• Silicon planar zener diode in a small plastic SMD
SOD-323 package
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless
otherwise specified.)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRRM
90
V
Maximum DC Reverse Voltage
VRM
80
V
Maximum Average Forward Current
IF
100
mA
Maximum Peak Forward Voltage
IFM
255
mA
Maximum Surge Current (1s)
IFSM
500
mA
Maximum Junction Temperature
TJ
125
°C
Storage temperature range
TS
-55 to +175
°C
Publication Order Number: [1SS355]
© Bruckewell Technology Corporation Rev. A -2014