1SMB5913A Datasheet, PDF (1/5 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

1SMB5913A-1SMB5956A
Vz : 3.3 - 200 Volts
PD : 3.0 Watts
Features
• Complete Voltage Range 3.3 to 200 Volts
• High peak reverse power dissipation
• Flat handling surface for accurate placement
• Low leakage current
• RoHS compliant package
Mechanical Data
• Case : SMB Molded plastic
• Epoxy : UL94V-0 rate flame retardant
• Lead : Lead Formed for Surface Mount
• Polarity : Color band denotes cathode end
• Mounting position : Any
• Weight : 0.93 gram
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Symbol
Parameter
Maximum Steady State Power Dissipation at TL = 75 °C
PD
Measured at Zero Lead Length
Derate Above 75 °C
RθJL
Thermal Resistance From Junction to Lead
Maximum Steady State Power Dissipation at TA = 25 °C
PD
Measured at Zero Lead Length
Derate Above 75 °C
RθJA
Thermal Resistance From Junction to Ambient
VF
Maximum Forward Voltage at IF = 200 mA
TJ
Junction Temperature Range
Tstg
Storage Temperature Range
Value
30
40
25
550
4.4
226
1.5
-65 to +150
-65 to +150
Unit
W
mW/°C
°C/W
W
mW/°C
°C/W
V
°C
°C
Publication Order Number: [1SMB5913A-1SMB5956A]
© Bruckewell Technology Corporation Rev. A -2014