ADS7820 Datasheet, PDF (3/10 Pages) Burr-Brown (TI) – 12-Bit 10ms Sampling CMOS ANALOG-to-DIGITAL CONVERTER

SPECIFICATIONS (CONT)
ELECTRICAL
T_A = –40°C to +85°C, f_S = 100kHz, V_DIG = V_ANA = +5V, using internal reference, unless otherwise specified.
ADS7820P/U
PARAMETER
POWER SUPPLIES
Specified Performance
V_DIG
V_ANA
+I_DIG
+I_ANA
Power Dissipation
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
Thermal Resistance (θ_JA)
Plastic DIP
SOIC
CONDITIONS
Must be ≤ V_ANA
f_S = 100kHz
MIN
TYP
MAX
+4.75
+4.75
–40
–55
–65
+5
+5.25
+5
+5.25
0.3
16
100
+85
+125
+150
75
75
ADS7820PB/UB
MIN
TYP
MAX
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
UNITS
V
V
mA
mA
mW
°C
°C
°C
°C/W
°C/W
NOTES: (1) LSB means Least Significant Bit. For the 12-bit, 0 to +5V input ADS7820, one LSB is 1.22mV. (2) Typical rms noise at worst case transitions and
temperatures. (3) Adjustable to zero with external potentiometer as shown in Figure 4b. (4) Full scale error is the worst case of Full Scale untrimmed deviation from
ideal last code transition divided by the transition voltage and includes the effect of offset error. (5) All specifications in dB are referred to a full-scale input. (6) Full-
Power Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified
performance after 2 x FS input overvoltage.
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: V_IN .................................................... –0.7V to +V_ANA +0.3V
REF .................................... +V_ANA +0.3V to AGND2 –0.3V
CAP ........................................... Indefinite Short to AGND2
Momentary Short to V_ANA
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V
V_ANA ....................................................................................................... 7V
V_DIG to V_ANA ..................................................................................... +0.3V
V_DIG ....................................................................................................... 7V
Digital Inputs ............................................................ –0.3V to +V_DIG +0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ................................................ +300°C
PACKAGE INFORMATION
PRODUCT
ADS7820P
ADS7820PB
ADS7820U
ADS7820UB
PACKAGE
Plastic DIP
Plastic DIP
SOIC
SOIC
PACKAGE DRAWING
NUMBER⁽¹⁾
246
246
217
217
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-
Brown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
ORDERING INFORMATION
PRODUCT
ADS7820P
ADS7820PB
ADS7820U
ADS7820UB
MAXIMUM
LINEARITY
ERROR (LSB)
±1.0
±0.5
±1.0
±0.5
MINIMUM
SIGNAL-TO-
(NOISE +
DISTORTION)
RATIO (dB)
70
72
70
72
SPECIFICATION
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
PACKAGE
Plastic DIP
Plastic DIP
SOIC
SOIC
®
3
ADS7820