ATF-55143 Datasheet, PDF (7/20 Pages) AVAGO TECHNOLOGIES LIMITED – Low Noise Enhancement Mode Pseudomorphic HEMT

ATF-55143 Typical Scattering Parameters, V_DS = 2V, I_DS = 10 mA
Freq.
S
GHz
Mag. ¹¹ Ang.
S
dB
M²a¹ g.
Ang.
0.1
0.998 -6.5
0.5
0.963 -31.7
0.9
0.894 -54.7
1.0
0.879 -60.1
1.5
0.793 -84.1
1.9
0.731 -100.8
2.0
0.718 -104.7
2.5
0.657 -123.7
3.0
0.611 -141.8
4.0
0.561 -177.5
5.0
0.558 149.4
6.0
0.566 122.5
7.0
0.583 99.7
8.0
0.601 77.7
9.0
0.636 57.5
10.0
0.708 38.3
11.0
0.76 21.8
12.0
0.794 7.6
13.0
0.819 -7.8
14.0
0.839 -23.6
15.0
0.862 -37.9
16.0
0.853 -51.0
17.0
0.868 -60.1
18.0
0.911 -70.3
20.78
20.37
19.57
19.32
18.07
17.11
16.86
15.79
14.80
13.10
11.52
10.06
8.78
7.62
6.63
5.66
4.45
3.32
2.29
1.27
-0.19
-1.83
-3.25
-4.44
10.941
10.434
9.516
9.252
8.009
7.166
6.970
6.159
5.494
4.517
3.768
3.183
2.748
2.404
2.147
1.919
1.670
1.465
1.302
1.157
0.978
0.810
0.688
0.601
174.9
154.8
137.1
133.0
115.2
102.8
100.1
86.6
74.2
51.0
29.3
9.4
-9.2
-27.4
-45.3
-64.6
-83.1
-100.2
-117.9
-136.7
-155.2
-171.8
173.9
158.5
S
Mag. ¹²
0.006
0.029
0.048
0.051
0.066
0.075
0.077
0.084
0.090
0.098
0.102
0.104
0.106
0.105
0.110
0.117
0.119
0.121
0.121
0.122
0.115
0.109
0.107
0.102
Ang.
86.1
70.2
56.9
54
41.5
33.6
31.8
23.7
16.5
3.6
-8.3
-18.4
-28.5
-38.4
-44.7
-56.6
-68.2
-79.3
-91.4
-104.4
-117.7
-129.4
-139.9
-153.2
S
Mag. ²²
0.796
0.762
0.711
0.693
0.622
0.570
0.559
0.503
0.446
0.343
0.269
0.224
0.189
0.140
0.084
0.08
0.151
0.217
0.262
0.327
0.431
0.522
0.588
0.641
Ang.
-4.2
-20.4
-34.4
-37.3
-49.6
-57.1
-58.7
-66.3
-73
-87.6
-104.4
-120.4
-137.3
-149.3
-170
109.3
64.5
40.8
20.8
0.5
-16.4
-28.6
-41.6
-55.8
MSG/MAG
dB
32.61
25.56
22.97
22.59
20.84
19.80
19.57
18.65
17.86
16.64
15.68
14.08
11.96
10.40
9.51
9.34
8.77
8.14
7.55
6.92
6.14
4.53
3.91
4.79
Typical Noise Parameters, V = 2V, I = 10 mA
DS
DS
Freq
F
min
GHz
dB
Γ
Γ
R
opt
opt
n/50
Mag. Ang.
0.5
0.21
0.65
17.5
0.13
0.9
0.26
0.60
22.6
0.12
1.0
0.27
0.55
27.0
0.12
1.9
0.42
0.55
49.4
0.11
2.0
0.43
0.54
51.7
0.11
2.4
0.50
0.45
61.5
0.10
3.0
0.59
0.40
78.1
0.09
3.9
0.73
0.26
111.9 0.07
5.0
0.92
0.21
172.5 0.06
5.8
1.04
0.24
-151.5 0.07
6.0
1.06
0.23
-144.5 0.08
7.0
1.22
0.28
-107.1 0.14
8.0
1.42
0.33
-75.5
0.24
9.0
1.57
0.43
-51.5
0.38
10.0
1.71
0.54
-33.3
0.57
G
a
dB
24.84
22.86
22.39
18.77
18.42
17.14
15.50
13.62
12.05
11.28
11.12
10.45
9.84
9.10
8.03
35
30
25
MSG
20
15
10
|S₂₁|²
5
MAG
0
-5
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S₂₁|² vs.
Frequency at 2V, 10 mA.
Notes:
1. F values at 2 GHz and higher are based on measurements while the F below 2 GHz have been extrapolated. The F values are based on a
min
mins
min
set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements F is calculated.
min
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
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