AT-31011 Datasheet, PDF (2/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-31011, AT-31033 Absolute Maximum Ratings
Symbol     Parameter
Units   Absolute Maximum^[1]
V_EBO Emitter-Base Voltage
V
V_CBO Collector-Base Voltage
V
V_CEO Collector-Emitter Voltage
V
I_C
Collector Current
mA
P_T
Power Dissipation^[2,3]
mW
T_j
Junction Temperature
°C
T_STG Storage Temperature
°C
1.5
11
5.5
16
150
150
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T_{mounting surface} = 25°C.
3. Derate at 1.82 mW/°C for T_C > 67.5°C.
Thermal Resistance^[2]:
     θ_jc = 550°C/W
Electrical Specifications, T_A = 25°C
AT-31011 AT-31033
Symbol    Parameters and Test Conditions Units Min Typ Max Min Typ  Max
NF

G_A

h_FE

I_CBO
I_EBO
Noise Figure
V_CE = 2.7 V, I_C = 1 mA
Associated Gain
V_CE = 2.7 V, I_C = 1 mA
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
f = 0.9 GHz dB
0.9^[1] 1.2^[1]
0.9^[2] 1.2^[2]
f = 0.9 GHz
V_CE = 2.7 V
I_C = 1 mA
V_CB = 3 V
V_EB = 1 V
dB
11^[1] 13^[1]
9^[2]
11^[2]
-
70
300 70 300
µA
µA
0.05 0.2
0.1 1.5
0.05 0.2
0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
V_BB
1000 pF
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
V_CC
W = 10 L = 1860
25 Ω
1000 pF
W = 30 L = 100
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Fig-
ure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
AT-31011 fig 1