BH616UV8011_08 Datasheet, PDF (8/11 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit

WRITE CYCLE 2 ^(1,6)
ADDRESS
CE1
CE2
LB, UB
WE
D_OUT
D_IN
t_WC
t_CW⁽¹¹⁾
(5)
BH616UV8011
(5)
t_CW⁽¹¹⁾
t_BW
(12)
t_AW
t_WP⁽²⁾
t_AS
t_WHZ^(4,10)
t_WR⁽³⁾
t_OW
(7)
(8)
t_DW
t_DH
(8,9)
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE
low. All signals must be active to initiate a write and any one signal can terminate a write by
going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
3. t_WR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = V_IL).
7. D_OUT is the same phase of write data of this write cycle.
8. D_OUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data
input signals of opposite phase to the outputs must not be applied to them.
10.Transition is measured ± 500mV from steady state with C_L = 5pF.
The parameter is guaranteed but not 100% tested.
11.t_CW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BH616UV8011
8
Revision 1.2
Oct.
2008