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BS616LV1010_06 Datasheet, PDF (7/11 Pages) Brilliance Semiconductor – Very Low Power CMOS SRAM 64K X 16 bit
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n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
BS616LV1010
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
CYCLE TIME : 55ns
(VCC=2.7~5.5V)
MIN. TYP. MAX.
CYCLE TIME : 70ns
(VCC=2.4~5.5V)
MIN. TYP. MAX.
tAVAX
tWC
Write Cycle Time
55
--
--
70
--
--
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
tAVWH
tAW
Address Valid to End of Write
55
--
--
70
--
--
tELWH
tCW
Chip Select to End of Write
(CE) 55
--
--
70
--
--
tBLWH
tBW
Data Byte Control to End of Write (LB, UB) 25
--
--
30
--
--
tWLWH
tWP
Write Pulse Width
30
--
--
35
--
--
tWHAX
tWR
Write Recovery Time
(CE, WE) 0
--
--
0
--
--
tWLQZ
tWHZ
Write to Output High Z
--
--
25
--
--
30
tDVWH
tDW
Data to Write Time Overlap
25
--
--
30
--
--
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
--
--
30
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
tWR1(3)
OE
tCW(11)
CE
(5)
LB, UB
WE
DOUT
DIN
tAS
tOHZ(4,10)
tBW
tAW
tWP(2)
tWR2(3)
tDH
tDW
R0201-BS616LV1010
7
Revision 2.6
May.
2006
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