BH62UV1601 Datasheet, PDF (6/9 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit

n AC ELECTRICAL CHARACTERISTICS (T_A = -40^OC to +85^OC)
WRITE CYCLE
BH62UV1601
JEDEC
PARAMETER
NAME
tAVAX
tAVWL
tAVWH
tELWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
PARANETER
NAME
tWC
tAS
tAW
tCW
tWP
tWR1
tWR2
tWHZ
tDW
tDH
tOHZ
tOW
DESCRIPTION
Write Cycle Time
Address Set up Time
Address Valid to End of Write
Chip Select to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
(CE1, WE)
(CE2)
CYCLE TIME : 55ns
MIN.
TYP.
MAX.
55
--
--
0
--
--
45
--
--
45
--
--
35
--
--
0
--
--
0
--
--
--
--
20
25
--
--
0
--
--
--
--
25
5
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 ⁽¹⁾
t_WC
ADDRESS
OE
CE1
t_CW⁽¹¹⁾
(5)
t_WR1⁽³⁾
CE2
WE
D_OUT
D_IN
(5)
t_AS
t_OHZ^(4,10)
t_CW⁽¹¹⁾
t_AW
t_WP⁽²⁾
t_WR2⁽³⁾
t_DH
t_DW
R0201-BH62UV1601
6
Revision 1.1
May
2006