BS616UV1010 Datasheet, PDF (5/10 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

BSI
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 ^(1,2,4)
t RC
ADDRESS
D _OUT
t OH
t AA
READ CYCLE2 ^(1,3,4)
BS616UV1010
t OH
CE
LB,UB
D _OUT
t ACS
t BA
(5)
t CLZ
t BE
t (5)
CHZ
t BDO
READ CYCLE3 ^(1,4)
ADDRESS
t RC
t AA
OE
t OE
CE
LB,UB
t OLZ
t₍₅₎ ACS
t CLZ
t BA
t BE
D _OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
t OH
t OHZ ⁽⁵⁾
t ^(1,5)
CHZ
t BDO
R0201-BS616UV1010
5
Revision 2.2
April 2001