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BS616LV4011 Datasheet, PDF (3/10 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 256K X 16 bit
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BSI
BS616LV4011
„ ABSOLUTE MAXIMUM RATINGS(1)
„ OPERATING RANGE
SYMBOL
V TERM
T BIAS
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
T STG
Storage Temperature
RATING
-0.5 to
Vcc+0.5
-40 to +125
-60 to +150
UNITS
V
OC
OC
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70O C
-40O C to +85O C
Vcc
2.4V ~ 5.5V
2.4V ~5.5V
PT
I OUT
Power Dissipation
DC Output Current
1.0
W
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX.
6
8
UNIT
pF
pF
1. This parameter is guaranteed and not tested.
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
TEST CONDITIONS
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
MIN. TYP. (1) MAX.
UNITS
-0.5
--
0.8
V
2.0
2.2
--
Vcc+0.
2
V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
IOL
Output Leakage Current Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3.0V
--
Vcc=5.0V
--
0.4
V
VOH
Output High Voltage Vcc = Min, IOH = -1mA
Vcc=3.0V
2.4
--
--
V
Vcc=5.0V
ICC
ICCSB
Operating Power Supply
Current
Vcc=3.0V
CE = VIL,IDQ = 0mA,F = Fmax(3)
Vcc=5.0V
--
--
Standby Current -TTL
CE = VIH ,I DQ = 0mA
Vcc=3.0V
--
Vcc=5.0V
--
--
20
mA
--
45
--
1
mA
--
2
ICCSB1
Standby Current- CMOS
CE Њ Vcc -0.2V,
Vcc=3.0V
VIN Њ Vcc - 0.2V or VINЉ 0.2V Vcc=5.0V
--
0.25 1.5
--
1.5
15
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
R0201-BS616LV4011
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
3
--
0.1
0
--
TRC (2)
--
1
uA
--
ns
--
ns
Revision 2.4
April 2002
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