BS616UV4016_08 Datasheet, PDF (11/11 Pages) Brilliance Semiconductor – Ultra Low Power CMOS SRAM 256K X 16 bit

„ Revision History
Revision No. History
1.5
Add Icc1 characteristic parameter
1.6
Change I-grade operation temperature range
- from –25^OC to –40^OC
1.7
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
BS616UV4016
Draft Date
Jan. 13, 2006
May. 25, 2006
Oct. 31, 2008
Remark
R0201-BS616UV4016
11
Revision 1.7
Oct.
2008