BS62UV2006 Datasheet, PDF (1/9 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit

BSI ^{Ultra Low Power/Voltage CMOS SRAM}
256K X 8 bit
BS62UV2006
„ FEATURES
• Wide Vcc operation voltage :
C-grade: 1.8V~3.6V
I-grade: 1.9V~3.6V
(Vcc_min.=1.65V at 25^oC)
• Ultra low power consumption :
Vcc = 2.0V C-grade : 8mA (Max.) operating current
I- grade : 10mA (Max.) operating current
0.20uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade : 11mA (Max.) operating current
I- grade : 13mA (Max.) operating current
0.30uA (Typ.) CMOS standby current
• High speed access time :
-85
85ns (Max.)
-10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
„ PRODUCT FAMILY
• Data retention supply voltage as low as 1.0V
• Easy expansion with CE2, CE1, and OE options
„ DESCRIPTION
The BS62UV2006 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.2uA at 2.0V /25^oC and maximum access time of 85ns at 85^oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV2006 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV2006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
PRODUCT
FAMILY
BS62UV2006DC
BS62UV2006TC
BS62UV2006STC
BS62UV2006SC
BS62UV2006DI
BS62UV2006TI
BS62UV2006STI
BS62UV2006SI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
( ns )
C-grade:1.8~3.6V
I-grade:1.9~3.6V
+0 ^O C to +70 ^O C 1.8V ~3.6V 85/100
-40 ^O C to +85 ^O C 1.9V ~ 3.6V 85/100
POWER DISSIPATION
STANDBY
( ICCSB1, Max )
Operating
( ICC, Max )
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
3.0uA
2.0uA
11mA
8mA
5.0uA
3.0uA
13mA
10mA
PKG TYPE
DICE
TSOP-32
STSOP-32
SOP-32
DICE
TSOP-32
STSOP-32
SOP-32
„ PIN CONFIGURATIONS
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
VCC 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
32
31
30
29
28
27
BS62UV2006TC
26
BS62UV2006STC
25
BS62UV2006TI
24
BS62UV2006STI
23
22
21
20
19
18
17
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
32
2
31
3
30
4
29
5
28
6
27
7 BS62UV2006SC 26
8 BS62UV2006SI 25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
„ BLOCK DIAGRAM
A13
A17
A15
A16
A14
A12
A7
A6
A5
A4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
Vdd
Gnd
Address
20
Input
Buffer
Row
Decoder
1024
Memory Array
1024 x 2048
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
2048
8
Column I/O
Write Driver
Sense Amp
8
256
Column Decoder
16
Address Input Buffer
A11 A9 A8 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62UV2006
1
Revision 1.1
Jan. 2004