BS62UV1027 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit

BSI ^{Ultra Low Power/Voltage CMOS SRAM}
128K X 8 bit
BS62UV1027
„ FEATURES
• Wide Vcc operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
(Vcc_min.=1.65V at 25^oC)
• Ultra low power consumption :
Vcc = 2.0V C-grade : 7mA (Max.) operating current
I -grade : 8mA (Max.) operating current
0.05uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade : 13mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.10uA (Typ.) CMOS standby current
• High speed access time :
-85
85ns (Max.)
-10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
BS62UV1027SC
BS62UV1027TC
BS62UV1027JC
BS62UV1027STC
BS62UV1027PC
BS62UV1027DC
BS62UV1027SI
BS62UV1027TI
BS62UV1027JI
BS62UV1027STI
BS62UV1027PI
BS62UV1027DI
+0 ^O C to +70 ^O C
-40 ^O C to +85 ^O C
„ PIN CONFIGURATIONS
1.8V ~ 3.6V
1.9V ~ 3.6V
• Data retention supply voltage as low as 1.2V
• Easy expansion with CE2, CE1 and OE options
„ DESCRIPTION
The BS62UV1027 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.05uA at 2.0V/25^oC and maximum access time of 85ns at 85^oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV1027 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV1027 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
SPEED
(ns)
C-grade:1.8~3.6V
I-grade:1.9~3.6V
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=
3.0V
Vcc=
2.0V
Vcc=
3.0V
Vcc=
2.0V
85/100 1.3uA 0.5uA 13mA 7mA
85/100 2.5uA 1.0uA 15mA 8mA
„ BLOCK DIAGRAM
PKG TYPE
SOP-32
TSOP-32
SOJ-32
STSOP -32
PDIP- 32
DICE
SOP-32
TSOP - 32
SOJ- 32
STSOP -32
PDIP- 32
DICE
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
32
2
31
3
30
4
29
5
28
6 BS62UV1027SC 27
7 BS62UV1027SI 26
8
9
BS62UV1027PC
BS62UV1027PI
25
BS62UV1027JC ²⁴
10 _BS62UV1027JI 23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
VCC 8
NC 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
BS62UV1027TC
BS62UV1027STC
BS62UV1027TI
BS62UV1027STI
32 OE
31 A10
30 CE1
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 GND
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
A6
A7
A12
A14
A16
A15
A13
A8
A9
A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE2
CE1
WE
OE
Vdd
Gnd
Address
20
Input
Buffer
Row
Decoder
1027
Memory Array
1027 x 1027
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
1027
8
Column I/O
Write Driver
Sense Amp
8
128
Column Decoder
14
Address Input Buffer
A5 A4 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62UV1027
1
Revision 2.1
Jan. 2004