BS62LV2565 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 32K X 8 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
32K X 8 bit
BS62LV2565
„ FEATURES
• Wide Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns (Max.) = 5.0V
-70
70ns (Max.) = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
„ DESCRIPTION
The BS62LV2565 is a high performance, very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.4uA and maximum access time of 55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV2565 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2565 is available in the JEDEC standard 28 pin
330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
8mmx13.4mm TSOP (normal type).
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
Vcc
TEMPERATURE RANGE
BS62LV2565SC
BS62LV2565TC
BS62LV2565PC
BS62LV2565JC
BS62LV2565DC
BS62LV2565SI
BS62LV2565TI
BS62LV2565PI
BS62LV2565JI
BS62LV2565DI
0 ^O C to +70^O C
-40 ^O C to +85^O C
„ PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
28
2
27
3
26
4
25
5
24
6
BS62LV2565SC
BS62LV2565SI
23
7 BS62LV2565PC 22
BS62LV2565PI
8 _BS62LV2565JC 21
9 ^BS62LV2565JI 20
10
19
11
18
12
17
13
16
14
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
4.5V ~ 5.5V
4.5V ~ 5.5V
OE 1
A11 2
A9 3
A8 4
A13 5
WE 6
VCC 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
BS62LV2565TC
BS62LV2565TI
28 A10
27 CE
26 DQ7
25 DQ6
24 DQ5
23 DQ4
22 DQ3
21 GND
20 DQ2
19 DQ1
18 DQ0
17 A0
16 A1
15 A2
SPEED
(ns)
Vcc=5.0V
55 / 70
POWER DISSIPATION
STANDBY
(ICCSB1 , Max)
Operating
(ICC , Max)
Vcc=5.0V
Vcc=5.0V
1.0uA
35mA
55 / 70
2.0uA
„ BLOCK DIAGRAM
40mA
PKG
TYPE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
A5
A6
A7
A12
A14
A13
A8
A9
A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
WE
OE
Vdd
Gnd
Address
18
Input
Buffer
Row
512
Decoder
Memory Array
512 x 512
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
512
8
Column I/O
Write Driver
Sense Amp
8
64
Column Decoder
12
Address Input Buffer
A4 A3 A2 A1 A0 A10
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS62LV2565
1
Revision 2.2
April 2001