BS62LV2563 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 32K X 8 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
32K X 8 bit
BS62LV2563
„ FEATURES
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
„ DESCRIPTION
The BS62LV2563 is a high performance, very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.01uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV2563 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2563 is available in the JEDEC standard 28 pin
330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
8mmx13.4mm TSOP (normal type).
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
BS62LV2563SC
BS62LV2563TC
BS62LV2563PC
BS62LV2563JC
BS62LV2563DC
BS62LV2563SI
BS62LV2563TI
BS62LV2563PI
BS62LV2563JI
BS62LV2563DI
0 ^O C to +70 ^O C 2.4V ~ 3.6V
-40 ^O C to +85 ^O C 2.4V ~ 3.6V
„ PIN CONFIGURATIONS
SPEED
(ns)
Vcc=3.0V
70
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=3.0V
Vcc=3.0V
0.2uA
20mA
70
0.4uA
„ BLOCK DIAGRAM
25mA
PKG
TYPE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
28
2
27
3
26
4
25
5 _BS62LV2563SC 24
6 ^BS62LV2563SI 23
BS62LV2563PC
7 BS62LV2563PI 22
8
BS62LV2563JC
BS62LV2563JI
21
9
20
10
19
11
18
12
17
13
16
14
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
OE 1
A11 2
A9 3
A8 4
A13 5
WE 6
VCC 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
BS62LV2563TC
BS62LV2563TI
28 A10
27 CE
26 DQ7
25 DQ6
24 DQ5
23 DQ4
22 DQ3
21 GND
20 DQ2
19 DQ1
18 DQ0
17 A0
16 A1
15 A2
A5
A6
A7
A12
A14
A13
A8
A9
A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
WE
OE
Vdd
Gnd
Address
18
Input
Buffer
Row
512
Decoder
Memory Array
512 x 512
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
512
8
Column I/O
Write Driver
Sense Amp
8
64
Column Decoder
12
Address Input Buffer
A4 A3 A2 A1 A0 A10
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS62LV2563
1
Revision 2.2
April 2001