BS62LV2001 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 256K X 8 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
256K X 8 bit
BS62LV2001
„ FEATURES
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns(Max.) at Vcc = 3.0V
-10 100ns(Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
• All I/O pins are 3V/5V tolerant
„ DESCRIPTION
The BS62LV2001 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates in a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.1uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV2001 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2001 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP, and 8mmx20mm TSOP.
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
VCC 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
BS62LV2001TC
BS62LV2001STC
BS62LV2001TI
BS62LV2001STI
32 OE
31 A10
30 CE1
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 GND
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
32
2
31
3
30
4
29
5
28
6
27
7 BS62LV2001SC 26
8 BS62LV2001SI 25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
„ BLOCK DIAGRAM
A13
A17
A15
A16
A14
A12
A7
A6
A5
A4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
Vdd
Gnd
Address
20
Input
Buffer
Row
Decoder
1024
Memory Array
1024 x 2048
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
2048
8
Column I/O
Write Driver
Sense Amp
8
256
Column Decoder
16
Address Input Buffer
A11 A9 A8 A3 A2 A1 A0 A10
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS62LV2001
1
Revision 2.5
April 2002