BS616UV4020 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

BSI Ultra Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable _BS616UV4020
„ FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I-grade : 20mA (Max.) operating current
0.2uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=2.0V
-10 100ns (Max.) at Vcc=2.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
„ PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc RANGE
BS616UV4020DC
BS616UV4020BC
BS616UV4020DI
BS616UV4020BI
+0 ^O C to +70 ^O C
-40 ^O C to +85 ^O C
1.8V ~ 3.6V
1.8V ~ 3.6V
„ DESCRIPTION
The BS616UV4020 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a
wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.2uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW
output enable(OE) and three-state output drivers.
The BS616UV4020 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV4020 is available in DICE form and 48-pin BGA type.
SPEED
(ns)
Vcc=2V
70 / 100
70 / 100
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=2V Vcc=3V Vcc=2V VVcccc==33VV
1uA
1.5uA 15mA 20mA
2uA
3uA 20mA 25mA
PKG TYPE
DICE
BGA-48-0810
DICE
BGA-48-0810
„ PIN CONFIGURATION
„ BLOCK DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
22
Input
Buffer
Row
2048
Decoder
16(8)
.
.
.
16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
2048 x 2048
2048
Column I/O
Write Driver
Sense Amp
128(256)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
14(16)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 _(SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV4020
1
Revision 2.4
April 2002