BS616UV4016 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit

BSI ^{Ultra Low Power/High Speed CMOS SRAM}
256K X 16 bit
BS616UV4016
n FEATURES
Ÿ Wide VCC operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
(VCC_min.=1.65V at 25^OC)
Ÿ Ultra low power consumption :
VCC = 2.0V C-grade : 10mA(Max.) operating current
I-grade : 12mA(Max.) operating current
0.3uA (Typ.) CMOS standby current
VCC = 3.0V C-grade : 13mA(Max.) operating current
I-grade : 15mA(Max.) operating current
0.45uA (Typ.) CMOS standby current
Ÿ High speed access time :
-85
85ns (Max.)
-10
100ns (Max.)
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.2V
n DESCRIPTION
The BS616UV4016 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with typical CMOS standby current of
0.3uA at 2.0V/25^OC and maximum access time of 85ns at 85^OC.
Easy memory expansion is provided by an active LOW chip enable (CE)
and active LOW output enable (OE) and three-state output drivers.
The BS616UV4016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV4016 is available in DICE form, JEDEC standard 44-pin
TSOP Type II and 48-ball BGA package.
n PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
VCC
RANGE
BS616UV4016DC
BS616UV4016EC
BS616UV4016AC
BS616UV4016DI
BS616UV4016EI
BS616UV4016AI
+0^OC to +70^OC
1.8V ~ 3.6V
-40^OC to +85^OC
1.9V ~ 3.6V
SPEED
(ns)
C-grade : 1.8~3.6V
I-grade : 1.9~3.6V
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
VCC=3.0V VCC=2.0V VCC=3.0V VCC=2.0V
PKG TYPE
DICE
85/100
6.0uA 3.0uA 13mA 10mA TSOP2-44
BGA-48-0608
DICE
85/100
8.0uA 5.0uA 15mA 12mA TSOP2-44
BGA-48-0608
n PIN CONFIGURATIONS
A4 1
44
A3 2
43
A2 3
42
A1 4
41
A0 5
40
CE 6
39
IO0 7
38
IO1 8
37
IO2 9
36
IO3 10
35
VCC 11 BS616UV4016EC 34
GND 12 _{BS616UV4016EI} 33
IO4 13
32
IO5 14
31
IO6 15
30
IO7 16
29
WE 17
28
A17 18
27
A16 19
26
A15 20
25
A14 21
24
A13 22
23
A5
A6
A7
OE
UB
LB
IO15
IO14
IO13
IO12
GND
VCC
IO11
IO10
IO9
IO8
NC
A8
A9
A10
A11
A12
1
2
3
4
5
6
A
UB OE A0 A1 A2 NC
B
IO8 LB A3 A4 CE IO0
C
IO9 IO10 A5 A6 IO1 IO2
D VSS IO11 A17 A7 IO3 VCC
E VCC IO12 NC A16 IO4 VSS
F IO14 IO13 A14 A15 IO5 IO6
G IO15 NC A12 A13 WE IO7
H
NC A8 A9 A10 A11 NC
n BLOCK DIAGRAM
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
IO0
.
.
.
.
.
.
IO15
CE
WE
OE
UB
LB
VCC
GND
Address
10
Input
Buffer
Row
Decoder
1024
Memory Array
1024 x 4096
.
16
.
.
.
16
.
.
Control
Data
Input
Buffer
Data
Output
Buffer
16
16
2048
Column I/O
Write Driver
Sense Amp
256
Column Decoder
8
Address Input Buffer
A13 A14 A15 A16 A17 A0 A1 A2
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616UV4016
1
Revision 1.3
Sep. 2005