BS616UV2021 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

BSI Ultra Low Power/Voltage CMOS SRAM
128K x 16 or 256K x 8 bit switchable _BS616UV2021
„ FEATURES
„ DESCRIPTION
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I-grade: 20mA (Max.) operating current
0.08uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616UV2021 is a high performance, Ultra low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits or
262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.08uA and maximum access time of 70/100ns in 2.0V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616UV2021 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV2021 is available in DICE form and 48-pin BGA type.
„ PRODUCT FAMILY
PRODUCT
FAMILY
BS616UV2021DC
BS616UV2021AC
BS616UV2021DI
BS616UV2021AI
OPERATING
TEMPERATURE
Vcc
RANGE
+0 ^O C to +70 ^O C 1.8V ~ 3.6V
-40 ^O C to +85 ^O C 1.8V ~ 3.6V
SPEED
( ns )
Vcc=
2.0V
70 / 100
70 / 100
POWER DISSIPATION
STANDBY
(ICCSB1, Max )
Operating
(ICC, Max )
Vcc=
2.0V
Vcc=
3.0V
Vcc=
2.0V
Vcc=
3.0V
0.5uA 0.7uA 15mA 20mA
1uA
1.5uA 20mA 25mA
PKG TYPE
DICE
BGA-48-0608
DICE
BGA-48-0608
„ PIN CONFIGURATION
„ BLOCK DIAGRAM
A15
A14
A13
A12
Address
A11
20
1024
A10
Input
Row
A9
Buffer
A8
Decoder
A7
A6
D0
.
.
.
.
.
.
.
.
D15
16(8)
16(8)
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
1024 x 2048
2048
Column I/O
Write Driver
Sense Amp
128(256)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
14(16)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 _(SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV2021
1
Revision 2.4
April 2002