BS616UV2011 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

BSI ^{Ultra Low Power/Voltage CMOS SRAM}
128K X 16 bit
BS616UV2011
„ FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0 V C-grade: 15mA (Max.) operating current
I-grade: 20mA (Max.) operating current
0.08uA (Typ.) CMOS standby current
Vcc = 3.0 V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ PRODUCT FAMILY
„ DESCRIPTION
The BS616UV2011 is a high performance, Ultra low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.08uA and maximum access time of 70/100ns in 2.0V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616UV2011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV2011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package , JEDEC standard 48-pin TSOP Type I package
and 48-ball BGA package.
PRODUCT
FAMILY
BS616UV2011DC
BS616UV2011EC
BS616UV2011TC
BS616UV2011AC
BS616UV2011DI
BS616UV2011EI
BS616UV2011TI
BS616UV2011AI
OPERATING
TEMPERATURE
Vcc
RANGE
+0^O C to +70^OC 1.8V ~ 3.6V
-40^O C to +85^OC 1.8V ~ 3.6V
SPEED
( _{ns )}
Vcc=
2.0V
70/100
70/100
POWER DISSIPATION
STANDBY
( I CCSB1, Max )
Operating
( I CC , Max )
Vcc=
2.0V
Vcc=
3.0V
Vcc=
2.0V
Vcc=
3.0V
0.5uA
0.7uA 15mA
20mA
1uA
1.5uA 20mA
25mA
PKG TYPE
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
„ PIN CONFIGURATIONS
„ BLOCK DIAGRAM
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
DQ0
7
DQ1
8
DQ2
9
DQ3
10
VCC
11
GND
12
DQ4
13
DQ5
14
DQ6
15
DQ7
16
WE
17
A16
18
A15
19
A14
20
A13
21
A12
22
44
43
42
41
40
39
38
37
36
BS616UV2011EC
35
34
BS616UV2011EI
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
N.C.
B
D8
UB
A3
A4
CE
D0
A8
A13
A15
Address
A16
20
1024
A14
Input
Row
A12
A7
Buffer
Decoder
A6
A5
A4
16
DQ0
.
.
Data
Input
16
Buffer
.
.
.
.
16
.
.
Data
Output
16
DQ15
Buffer
Memory Array
1024 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
C
D9 D10 A5
A6
D1
D2
D
VSS D11 N.C. A7
D3 VCC
E
VCC D12 N.C. A16
D4
VSS
CE
WE
OE
Control
UB
LB
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
F
D14 D13 A14 A15 D5
D6
Vcc
Gnd
G
D15 N.C. A12 A13 WE
D7
H
N.C. A8
A9
A10 A11 N.C.
Brillian⁴c^8-e^balS^{l B}e^Gm^{A to}i^pc^vo^iewnductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV2011
1
Revision 2.5
April 2002