BS616LV8017 Datasheet, PDF (1/9 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 512K X 16 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
512K X 16 bit
(Single CE Pin) _BS616LV8017
„ FEATURES
• Wide Vcc operation voltage : 2.4~5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 75mA (@55ns) operating current
I -grade: 76mA (@55ns) operating current
C-grade: 60mA (@70ns) operating current
I -grade: 61mA (@70ns) operating current
8.0uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ DESCRIPTION
The BS616LV8017 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.5uA at 3V/25^oC and maximum access time of 55ns at 3.0V/85^oC.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV8017 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8017 is available in 48B BGA and 44L TSOP2 packages.
„ PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV8017EC
BS616LV8017FC
BS616LV8017EI
BS616LV8017FI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
( ns )
55ns : 3.0~5.5V
70ns : 2.7~5.5V
+0 ^O C to +70^OC 2.4V ~ 5.5V 55 / 70
-40 ^O C to +85^OC 2.4V ~ 5.5V 55 / 70
POWER DISSIPATION
STANDBY
( ICCSB1, Max )
Operating
( ICC , Max )
Vcc=3V
Vcc=5V ^{Vcc=3V Vcc=5V}
70ns
70ns
5uA 55uA 24mA 60mA
10uA 110uA 25mA 61mA
PKG TYPE
TSOP2-44
BGA-48-0912
TSOP2-44
BGA-48-0912
„ PIN CONFIGURATIONS
„ BLOCK DIAGRAM
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
DQ0
7
DQ1
8
DQ2
9
DQ3
10
Vcc
11
Vss
12
DQ4
13
DQ5
14
DQ6
15
DQ7
16
WE
17
A18
18
A17
19
A16
20
A15
21
A14
22
44
43
42
41
40
39
38
37
36
BS616LV8017EC 35
BS616LV8017EI
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
1 _{2345 6}
A ^{LB OE A0 A1 A2 NC}
B ^{D8 UB A3 A4 CE D0}
C ^{D9 D10 A5 A6 D1 D2}
D ^V SS ^{D11 A17 A7 D3 VCC}
E ^V CC ^{D12 VSS A16 D4 V} SS
F ^{D14 D13 A 14 A 15 D5 D6}
G ^{D15 N.C A12 A 13 WE D7}
H ^{A18 A 8 A9 A10 A 11 NC}
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
D0
.
.
.
.
D15
Address
22
Input
Buffer
Row
2048
Decoder
Data
16
Input
16
.
Buffer
.
.
16
.
Data
Output
16
Buffer
Memory Array
2048 x 4096
4096
Column I/O
Write Driver
Sense Amp
256
Column Decoder
CE
WE
OE
UB
LB
Vcc
Vss
Control
16
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5 A18
48-Ball CSP top View
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV8017
1
Revision 2.1
Jan. 2004