BS616LV8016_08 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Very Low Power CMOS SRAM 512K X 16 bit

Very Low Power CMOS SRAM
512K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV8016
„ FEATURES
y Wide V_CC operation voltage : 2.4V ~ 5.5V
y Very low power consumption :
V_CC = 3.0V Operation current : 31mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 4/8uA (Max.) at 70/85^OC
V_CC = 5.0V Operation current : 76mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current : 25/50uA (Max.) at 70/85^OC
y High speed access time :
-55
55ns(Max.) at V_CC=3.0~5.5V
-70
70ns(Max.) at V_CC=2.7~5.5V
y Automatic power down when chip is deselected
y Easy expansion with CE2, CE1 and OE options
y I/O Configuration x8/x16 selectable by LB and UB pin.
y Three state outputs and TTL compatible
y Fully static operation, no clock, no refresh
y Data retention supply voltage as low as 1.5V
„ DESCRIPTION
The BS616LV8016 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 8/50uA at Vcc=3/5V at 85^OC and maximum access time of
55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV8016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8016 is available in DICE form and 48-ball BGA
package.
„ POWER CONSUMPTION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
(I_CCSB1, Max)
V_CC=5.0V V_CC=3.0V
BS616LV8016DC
BS616LV8016FC
Commercial
+0^OC to +70^OC
25uA
4.0uA
POWER DISSIPATION
1MHz
V_CC=5.0V
10MHz
Operating
(I_CC, Max)
f_Max.
1MHz
V_CC=3.0V
10MHz
9mA 39mA 75mA 1.5mA 19mA
f_Max.
30mA
PKG TYPE
DICE
BGA-48-0912
BS616LV8016FI
Industrial
-40^OC to +85^OC
50uA
8.0uA 10mA 40mA 76mA
2mA
20mA 31mA BGA-48-0912
„ PIN CONFIGURATIONS
1
2
3
4
5
6
A
LB
OE
A0
A1
A2 CE2
B
DQ8 UB A3 A4 CE1 DQ0
C
DQ9 DQ10 A5 A6 DQ1 DQ2
D
VSS DQ11 A17 A7 DQ3 VCC
E
VCC DQ12 VSS A16 DQ4 VSS
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 NC A12 A13 WE DQ7
H
A18 A8
A9 A10 A11 NC
48-ball BGA top view
„ BLOCK DIAGRAM
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
DQ0
.
.
.
.
.
.
DQ15
CE2
CE1
WE
OE
UB
LB
VCC
VSS
Address
10
Input
Buffer
Row
Decoder
1024
Memory Array
1024 x 8192
.
16
.
.
.
16
.
.
Control
Data
Input
Buffer
Data
Output
Buffer
16
16
8192
Column I/O
Write Driver
Sense Amp
512
Column Decoder
9
Address Input Buffer
A14 A15 A16 A17 A18 A0 A1 A2 A3
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616LV8016
1
Revision 2.4
Oct.
2008