BS616LV4020 Datasheet, PDF (1/12 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

BSI Very Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable _BS616LV4020
„ FEATURES
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=3.0V
-10 100ns (Max.) at Vcc=3.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
„ DESCRIPTION
The BS616LV4020 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.5uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV4020 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4020 is available in DICE form and 48-pin BGA type.
„ PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc RANGE
BS616LV4020DC
BS616LV402 0AC
BS616LV4020BC
BS616LV4020DI
BS616LV4020AI
BS616LV4020BI
+0 ^O C to +70 ^O C
-40 ^O C to +85 ^O C
„ PIN CONFIGURATION
2.7V ~ 3.6V
2.7V ~ 3.6V
SPEED
(ns)
Vcc=3.0V
70 / 100
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=3.0V
Vcc=3.0V
8uA
20mA
70 / 100
12uA
„ BLOCK DIAGRAM
25mA
PKG TYPE
DICE
BGA-48-0608
BGA-48-0810
DICE
BGA-48-0608
BGA-48-0810
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
22
Input
Buffer
Row
2048
Decoder
16(8)
.
.
.
16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
2048 x 2048
2048
Column I/O
Write Driver
Sense Amp
128(256)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
14(16)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 _(SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV4020
1
Revision 2.3
April 2002