BS616LV2011 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 128K X 16 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
128K X 16 bit
BS616LV2011
„ FEATURES
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 40mA (Max.) operating current
I -grade: 45mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ PRODUCT FAMILY
„ DESCRIPTION
The BS616LV2011 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package , JEDEC standard 48-pin TSOP Type I package
and 48-ball BGA package.
PRODUCT
FAMILY
BS616LV2011DC
BS616LV2011EC
BS616LV2011TC
BS616LV2011AC
BS616LV2011DI
BS616LV2011EI
BS616LV2011TI
BS616LV2011AI
OPERATING
TEMPERATURE
Vcc
RANGE
+0 ^O C to +70 ^O C 2.4V ~ 5.5V
-40 ^O C to +85 ^O C 2.4V ~ 5.5V
SPEED
( ns )
Vcc=
3.0V
70/100
70/100
POWER DISSIPATION
STANDBY
( ICCSB1, Max )
Operating
( ICC, Max )
Vcc=
3.0V
Vcc=
5.0V
Vcc=
3.0V
Vcc=
5.0V
0.7uA
6uA
20mA
40mA
1.5uA
25uA
25mA
45mA
PKG TYPE
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
„ PIN CONFIGURATIONS
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
DQ0
7
DQ1
8
DQ2
9
DQ3
10
VCC
11
GND
12
DQ4
13
DQ5
14
DQ6
15
DQ7
16
WE
17
A16
18
A15
19
A14
20
A13
21
A12
22
1
44
43
42
41
40
39
38
37
BS616LV2011EC 36
BS616LV2011EI
35
34
33
32
31
30
29
28
27
26
25
24
23
2
3
4
5
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
6
A
LB
OE
A0
A1
A2
N.C.
B
D8
UB
A3
A4
CE
D0
„ BLOCK DIAGRAM
A8
A13
A15
Address
A16
20
1024
A14
Input
Row
A12
A7
Buffer
Decoder
A6
A5
A4
16
DQ0
.
.
Data
Input
16
Buffer
.
.
.
.
16
.
.
Data
Output
16
DQ15
Buffer
Memory Array
1024 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
C
D9
D10
A5
A6
D1
D2
D
VSS D11 N.C. A7
D3 VCC
E
VCC D12 N.C. A16
D4
VSS
F
D14 D13 A14 A15 D5
D6
G
D15 N.C. A12 A13 WE
D7
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
H
N.C. A8
A9
A10 A11 N.C.
Brillian⁴c^8-e^balS^{l B}e^Gm^{A to}i^pc^vo^iewnductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2011
1
Revision 2.5
April 2002