BS616LV2010 Datasheet, PDF (1/9 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 128K X 16 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
128K X 16 bit
BS616LV2010
„ FEATURES
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 25mA (Max.) operating current
I-grade: 30mA (Max.) operating current
0.15uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ DESCRIPTION
The BS616LV2010 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.15uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2010 is available in DICE form , JEDEC standard
44-pin TSOP Type II package. 48-pin TSOP Type I package and 48-ball
BGA package.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
Vcc=3.0V
POWER DISSIPATION
STANDBY
Operating
( ICCSB1, Max )
( ICC, Max )
Vcc=3.0V
Vcc=3.0V
PKG TYPE
BS616LV2010EC +0 ^O C to +70 ^O C 2.7V ~ 3.6V 70 / 100
8uA
25mA
TSOP2-44
BS616LV201 0EI -40 ^O C to +85 ^O C 2.7V ~ 3.6V 70 / 100
12uA
30mA
TSOP2-44
„ PIN CONFIGURATIONS
„ BLOCK DIAGRAM
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
DQ0
7
DQ1
8
DQ2
9
DQ3
10
VCC
11
GND
12
DQ4
13
DQ5
14
DQ6
15
DQ7
16
WE
17
A16
18
A15
19
A14
20
A13
21
A12
22
44
43
42
41
40
39
38
37
BS616LV2010EC
36
35
BS616LV2010EI
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
A8
A13
A15
Address
A16
20
1024
A14
Input
A12
A7
Buffer
Row
Decoder
A6
A5
A4
16
DQ0
.
.
Data
Input
16
Buffer
.
.
.
.
16
.
.
Data
Output
16
DQ15
Buffer
Memory Array
1024 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2010
1
Revision 2.2
April. 2001