BS616LV1622 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

BSI ^{Very Low Power/Voltage CMOS SRAM}
1M x 16 or 2M x 8 bit switchable
BS616LV1622
„ FEATURES
• Wide Vcc operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 113mA (@55ns) operating current
I -grade: 115mA (@55ns) operating current
C-grade: 90mA (@70ns) operating current
I -grade: 92mA (@70ns) operating current
15uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
„ DESCRIPTION
The BS616LV1622 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,676 words by 16 bits or
2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide
range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 3.0uA at 3V/25^oC and maximum access time of 55ns at 3.0V/85^oC .
This device provide three control inputs and three states output drivers
for easy memory expansion.
The BS616LV1622 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package.
„ PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
BS616LV1622TC
+0 ^O C to +70 ^O C
Vcc
RANGE
SPEED
(ns)
55ns : 3.0~5.5V
70ns : 2.7~5.5V
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=3V Vcc=5V ^{Vcc=3V Vcc=5V}
70ns
70ns
PKG TYPE
2.4V ~ 5.5V 55 / 70
10uA 110uA 36mA 90mA TSOP1-48(12mmx20mm)
BS616LV1622TI
-40 ^O C to +85 ^O C 2.4V ~ 5.5V 55 / 70
20uA 220uA 37mA 92mA TSOP1-48(12mmx20mm)
„ PIN CONFIGURATIONS
A4 1
A3
A2
A1
A0
/CE1
D0
D1
D2 9
D3 10
Vcc
CIO
Vss 13
D4
D5
D6 16
D7 17
A19
/WE
A18
A17
A16
A15
A14 24
BS616LV1622TC
BS616LV1622T I
48 A5
47 A6
46 A7
/OE
/UB
/LB
CE2
SAE
D15
D14
D13
37 D12
Vss
Vcc
D11
D10
D9
D8
A8
A9
A10
27 A11
A12
25 A13
48-pin 12mmx20mm TSOP1 top view
„ BLOCK DIAGRAM
A19
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
24
Input
Buffer
Row
4096
Decoder
16(8)
.
.
.
16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
4096 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV1622
1
Revision 2.1
Jan. 2004