BS616LV1010 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 64K X 16 bit

BSI ^{Very Low Power/Voltage CMOS SRAM}
64K X 16 bit
BS616LV1010
„ FEATURES
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ DESCRIPTION
The BS616LV1010 is a high performance, very low power CMOS Static
Random Access Memory organized as 65,536 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.02uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE) and active LOW output enable(OE) and three-state output
drivers.
The BS616LV1010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1010 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin BGA package.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
Vcc=3.0V
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=5.0V Vcc=3.0V Vcc=5.0V Vcc=3.0V
PKG TYPE
BS616LV1010EC
+0 ^O C to +70 ^O C 2.4V ~ 5.5V
70
BS616LV1010AC
TSOP2-44
3uA
0.5uA
35mA
20mA
BGA-48-0608
BS616LV1010EI
-40 ^O C to +85 ^O C 2.4V ~ 5.5V
70
BS616LV1010AI
TSOP2-44
5uA
1.5uA
40mA
25mA
BGA-48-0608
„ PIN CONFIGURATIONS
„ BLOCK DIAGRAM
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
DQ0
7
DQ1
8
DQ2
9
DQ3
10
VCC
11
GND
12
DQ4
13
DQ5
14
DQ6
15
DQ7
16
WE
17
A15
18
A14
19
A13
20
A12
21
NC
22
1
44
43
42
41
40
39
38
37
BS616LV1010EC
36
35
BS616LV1010EI 34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
IO8
UB
A3
A4
CE
IO0
C
IO9 IO10 A5
A6
IO1
IO2
D
VSS IO11 NC
A7
IO3 VCC
E
VCC IO12 NC
NC
IO4 VSS
F
IO14 IO13 A14 A15
IO5 IO6
A8
A13
A15
Address
18
512
A14
Input
A12
Row
A7
Buffer
A6
Decoder
A5
A4
16
DQ0
.
.
Data
Input
16
Buffer
.
.
.
.
16
.
.
Data
Output
16
DQ15
Buffer
Memory Array
512 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
G
IO15
NC
A12
A13
WE
IO7
H
NC
A8
A9
A10
A11
NC
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV1010
1
Revision 2.2
April 2001