BH62UV8000 Datasheet, PDF (1/9 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM

BSI ^{Ultra Low Power/High Speed CMOS SRAM}
1M X 8 bit
BH62UV8000
n FEATURES
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.0V
Operation current : 5.0mA at 70ns at 25^OC
1.5mA at 1MHz at 25^OC
Standby current : 2.5uA at 25^OC
VCC = 2.0V Data retention current : 2.5uA at 25^OC
Ÿ High speed access time :
-70
70ns at 1.8V at 85^OC
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE1, CE2 and OE options
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refreash
Ÿ Data retention supply voltage as low as 1.0V
n DESCRIPTION
The BH62UV8000 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 1,048,576 by 8 bits and
operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with typical operating current of 1.5mA at
1MHz at 3.6V/25^OC and maximum access time of 70ns at 1.8V/85^OC.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH62UV8000 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BH62UV8000 is available in DICE form and 48-ball BGA package.
n PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
VCC
RANGE
SPEED
(ns)
VCC=1.8~3.6V
POWER CONSUMPTION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
VCC=3.6V VCC=1.8V VCC=3.6V VCC=1.8V
PKG TYPE
BH62UV8000AI
BH62UV8000DI
+0^OC to +70^OC
-25^OC to +85^OC
1.65V ~ 3.6V
70
13uA 10uA 10mA 7mA
BGA-48-0608
DICE
70
15uA 12uA 10mA 7mA
n PIN CONFIGURATIONS
1
2
3
4
5
6
A
NC OE
A0
A1
A2 CE2
B
NC NC
A3
A4 CE1 NC
C
DQ0 NC A5
A6 NC D04
D
VSS DQ1 A17 A7 DQ5 VCC
E
VCC DQ2 VSS A16 DQ6 VSS
F
D3 NC A14 A15 NC DQ7
G
NC NC A12 A13 WE NC
H
A18 A8
A9 A10 A11 A19
48-ball BGA top view
n BLOCK DIAGRAM
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
VCC
GND
Address
10
Input
Buffer
Row
Decoder
1024
Memory Array
1024 x 18192
8
8
Control
Data
Input
8
Buffer
Data
8
Output
Buffer
8192
Column I/O
Write Driver
Sense Amp
1024
Column Decoder
10
Address Input Buffer
A19 A18 A17 A15 A14 A13 A16 A2 A1 A0
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH62UV8000
1
Revision 1.0
Jul. 2005