BH62UV4000 Datasheet, PDF (1/12 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit

Ultra Low Power/High Speed CMOS SRAM
512K X 8 bit
Green package materials are compliant to RoHS
BH62UV4000
n FEATURES
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.6V Operation current : 10mA (Max.)at 55ns
2mA (Max.)at 1MHz
Standby current : 2.0uA (Typ.) at 3.0V/25^OC
VCC = 1.2V Data retention current : 1.0uA at 25^OC
Ÿ High speed access time :
-55
55ns (Max.) at VCC=1.65~3.6V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refresh
Ÿ Data retention supply voltage as low as 1.0V
n POWER CONSUMPTION
n DESCRIPTION
The BH62UV4000 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.6V/25^OC and maximum access time of 55ns at
1.65V/85^OC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BH62UV4000 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH62UV4000 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 400mil TSOP-II, 600mil Plastic DIP,
8mmx13.4mm STSOP, 8mmx20mm TSOP and 36-ball BGA
package.
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Icc STANDBY
(ICCSB1, Max)
VCC=3.6V VCC=1.8V
BH62UV4000DI
BH62UV4000EI
BH62UV4000HI
BH62UV4000PI
BH62UV4000SI
BH62UV4000STI
BH62UV4000TI
Industrial
-40^OC to +85^OC
10uA
10uA
POWER DISSIPATION
VCC=3.6V
Icc Operating
(ICC, Max)
1MHz 10MHz
fMax.
1MHz
VCC=1.8V
10MHz
2mA 6mA 10mA 1.5mA 5mA
fMax.
8mA
PKG TYPE
DICE
TSOP-II
BGA-36-0608
PDIP-32
SOP-32
STSOP-32
TSOP-32
n PIN CONFIGURATIONS
n BLOCK DIAGRAM
A11 1
A9 2
A8 3
A13 4
WE 5
A17 6
A15 7
VCC 8
A18 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
BH62UV4000STI
BH62UV4000TI
32 OE
31 A10
30 CE
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 GND
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
A13
A12
A11
A10
Address
10
1024
A9
Input
Row
A8
A7
Buffer
Decoder
A6
A5
A4
Memory Array
1024 x 4096
4096
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1_•
32
2
31
3
30
4
29
5
28
6
27
7 _BH62UV4000EI 26
8 _BH62UV4000PI 25
9 _BH62UV4000SI 24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
6
A
A0
A1
NC A3
A6
A8
B
DQ4 A2 WE A4
A7 DQ0
C
DQ5
NC A5
DQ1
D
VSS
VCC
E
VCC
VSS
F
DQ6
A18 A17
DQ2
G
DQ7 OE CE A16 A15 DQ3
H
A9 A10 A11 A12 A13 A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
WE
OE
VCC
GND
8
8
Control
Data
Input
8
Buffer
Data
8
Output
Buffer
Column I/O
Write Driver
Sense Amp
512
Column Decoder
9
Address Input Buffer
A18 A16 A15 A14 A0 A17 A3 A2 A1
36-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH62UV4000
1
Revision 1.2
Aug.
2006