BH616UV8010 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit

BSI ^{Ultra Low Power/High Speed CMOS SRAM}
512K X 16 bit
BH616UV8010
n FEATURES
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.0V
Operation current : 5.0mA at 70ns at 25^OC
1.5mA at 1MHz at 25^OC
Standby current : 2.5uA at 25^OC
VCC = 2.0V Data retention current : 2.5uA at 25^OC
Ÿ High speed access time :
-70
70ns at 1.8V at 85^OC
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE1, CE2 and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refreash
Ÿ Data retention supply voltage as low as 1.0V
n DESCRIPTION
The BH616UV8010 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 524,288 by 16 bits and operates
in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with typical operating current of 1.5mA at
1MHz at 3.6V/25^OC and maximum access time of 70ns at 1.8V/85^OC.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV8010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BH616UV8010 is available in DICE form, JEDEC standard 48-pin
TSOP-I and 48-ball BGA package.
n PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
VCC
RANGE
SPEED
(ns)
VCC=1.8~3.6V
POWER CONSUMPTION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
VCC=3.6V VCC=1.8V VCC=3.6V VCC=1.8V
PKG TYPE
BH616UV8010DI
BH616UV8010TI
BH616UV8010AI
+0^OC to +70^OC
-25^OC to +85^OC
1.65V ~ 3.6V
70
13uA 10uA 10mA 7mA ^DICE
TSOP1-48
70
15uA 12uA 10mA 7mA _BGA-48-0608
n PIN CONFIGURATIONS
A15 1
A14 2
A13 3
A12 4
A11 5
A10 6
A9 7
A8 8
NC 9
NC 10
WE 11
CE2 12
NC 13
UB 14
LB 15
A18 16
A17 17
A7 18
A6 19
A5 20
A4 21
A3 22
A2 23
A1 24
BH616UV8010TC
BH616UV8010TI
1
2
3
4
5
6
A LB OE A0 A1 A2 CE2
B DQ8 UB A3 A4 CE1 DQ0
C DQ9 DQ10 A5 A6 DQ1 DQ2
D VSS DQ11 A17 A7 DQ3 VCC
E VCC DQ12 VSS A16 DQ4 VSS
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 NC A12 A13 WE DQ7
H A18 A8 A9 A10 A11 NC
48 A16
47 NC
46 VSS
45 DQ15
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE
27 VSS
26 CE1
25 A0
n BLOCK DIAGRAM
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
DQ0
.
.
.
.
.
.
DQ15
CE2
CE1
WE
OE
UB
LB
VCC
VSS
Address
10
Input
Buffer
.
16
.
.
.
16
.
.
Control
Row
Decoder
1024
Memory Array
1024 x 8192
Data
Input
Buffer
Data
Output
Buffer
16
16
8192
Column I/O
Write Driver
Sense Amp
512
Column Decoder
9
Address Input Buffer
A18 A17 A15 A14 A13 A16 A2 A1 A0
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH616UV8010
1
Revision 1.0
Jul. 2005