BA-3E12UW Datasheet, PDF (1/3 Pages) BRIGHT LED ELECTRONICS CORP – hi-eff red chips, which are made from GaAsP on GaP substrate

BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-3E12UW
● Features :
● Package Dimensions :
1. Emitting area : 18.78×5.85（mm）
2. Low power requirement.
3. Excellent characters appearance.
6.80(.268)
19.80(.780)
0.50(.020)
2.20(.087)
4. Solid state reliability.
5. Categorized for luminous intensity.
● Description :
2.54(.100)
12.70(.50)
6.40(.252)
3.00(.118) MIN.
0.5(.020)
1. The BA-3E12UW had uniform
emitting light.
2. This product use hi-eff red chips,
which are made from GaAsP on
GaP substrate.
3. This product have a white face and
white segments.
4. This product doesn't contain restriction
substance, comply ROHS standard.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
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