BUV47 Datasheet, PDF (5/7 Pages) Mospec Semiconductor – POWER TRANSISTORS(9A,400V,90W)

BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
V_CE = 5 V
TCP762AA
T_C = 125°C
T_C = 25°C
T_C = -65°C
10
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP762AB
5·0
T_C = 25°C
I_C = 8 A
I_C = 6 A
4·0
I_C = 4 A
I_C = 2 A
3·0
2·0
1·0
1·0
0·1
1·0
10
I_C - Collector Current - A
Figure 5.
0
0
0·5
1·0
1·5
2·0
2·5
I_B - Base Current - A
Figure 6.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP762AK
0·5
T_C = 100°C
I_C = 8 A
0·4
I_C = 6 A
I_C = 4 A
I_C = 2 A
0·3
0·2
0·1
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
10
TCP762AC
1·0
0·1
0·01
BUV47A
V_CE = 1000 V
BUV47
V_CE = 850 V
0
0
0·5
1·0
1·5
2·0
2·5
I_B - Base Current - A
Figure 7.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
0·001
-80 -60 -40 -20 0 20 40 60 80 100 120 140
T_C - Case Temperature - °C
Figure 8.
5