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TISP4350H3BJR Datasheet, PDF (4/13 Pages) Bourns Electronic Solutions – TISP4xxxH3BJ Overvoltage Protector Series
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Repetitive peak off-
IDRM state current
VD = VDRM
V(BO) Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
Impulse breakover
V(BO) voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = - /+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
Min. Typ. Max. Unit
TA = 25 °C
TA = 85 °C
‘4070
‘4080
‘4095
±5
±10
µA
±70
±80
±95
‘4115
‘4125
‘4145
‘4165
‘4180
±115
±125
±145
±165
±180
‘4200
‘4220
±200
V
±220
‘4240
±240
‘4250
‘4265
±250
±265
‘4290
‘4300
‘4350
±290
±300
±350
‘4395
‘4400
±395
±400
‘4070
±78
‘4080
±88
‘4095
±103
‘4115
‘4125
±124
±134
‘4145
‘4165
‘4180
±154
±174
±189
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
±210
V
±230
±250
±261
±276
±301
±311
‘4350
‘4395
‘4400
±362
±408
±413
±0.15
±0.6
A
±3
V
±0.15
±0.6
A
±5
kV/µs
TA = 85 °C
±10
µA
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.