BD241 Datasheet, PDF (4/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40W)

BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS631AG
t_p = 300 µs, d = 0.1 = 10%
t_p = 1 ms, d = 0.1 = 10%
t_p = 10 ms, d = 0.1 = 10%
10
DC Operation
1·0
0·1
0·01
1·0
BD241
BD241A
BD241B
BD241C
10
100
V_CE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AA
50
40
30
20
10
0
0
25
50
75
100 125 150
T_C - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.