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CD214B-B220 Datasheet, PDF (3/4 Pages) Bourns Electronic Solutions – CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve
3.50
2.00
1.50
1.00
0.50 Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
25
50
75
100
125
150
175
Lead Temperature (°C)
Typical Forward Characteristics
10
Maximum Non-Repetitive Surge Current
60
50
40
30
20
Pulse Width 8.3 ms
10 Single Half Sine-Wave
(JEDEC Method)
0
12
5
10 20
50
100
Number of Cycles at 60 Hz
Typical Junction Capacitance
1000
B220 to B240
1.0
Ta = 25 °C
Pulsewidth: 300 µs
B250 to B260
100
0.1
.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (Volts)
Typical Reverse Characteristics
100
10
Ta = 125 °C
Ta = 100 °C
1.0
0.1
0.01
Ta = 25 °C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
F = 1 MHz
TJ = 25 °C
0
0.1
1.0
4.0 10.0
100
Reverse Voltage (Volts)