CD214B-B120 Datasheet, PDF (3/4 Pages) Bourns Electronic Solutions – CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode

CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve
1.00
0.75
0.50
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
20
40
60
80
100 120
140
Lead Temperature (°C)
Typical Forward Characteristics
10
Maximum Non-Repetitive Surge Current
30
20
10
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
0
12
5
10 20
50
100
Number of Cycles at 60 Hz
Typical Junction Capacitance
1000
B120 to B140
1.0
Ta = 25 °C
Pulsewidth: 300 µs
100
B150 to B160
0.1
.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (Volts)
Typical Reverse Characteristics
100
10
Ta = 125 °C
1.0
Ta = 100 °C
0.1
0.01
Ta = 25 °C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
F = 1 MHz
TJ = 25 °C
0
0.1
1.0
4.0 10.0
100
Reverse Voltage (Volts)