BDV64 Datasheet, PDF (3/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,125W)

BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS145AD
T_C = -40°C
T_C = 25°C
T_C = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
TCS145AE
t_p = 300 µs, duty cycle < 2%
I_B = I_C / 100
-1·5
1000
-1·0
V_CE = -4 V
t_p = 300 µs, duty cycle < 2%
100
-0·5
-1·0
-10
-20
I_C - Collector Current - A
Figure 1.
-0·5
0
-0·5
T_C = -40°C
T_C = 25°C
T_C = 100°C
-1·0
-10
-20
I_C - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS145AF
-3·0
T_C = -40°C
T_C = 25°C
-2·5 T_C = 100°C
-2·0
-1·0
-1·5
-0·5
I_B = I_C / 100
t_p = 300 µs, duty cycle < 2%
0
-0·5
-1·0
-10
-20
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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