BDT61 Datasheet, PDF (3/5 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
20000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS110AD
T_C = -40°C
T_C = 25°C
T_C = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AB
2·0
t_p = 300 µs, duty cycle < 2%
I_B = I_C / 100
1·5
1000
V_CE = 3 V
t_p = 300 µs, duty cycle < 2%
100
0·5
1·0
I_C - Collector Current - A
Figure 1.
1·0
0·5
0
5·0
0·5
T_C = -40°C
T_C = 25°C
T_C = 100°C
1·0
5·0
I_C - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
3·0
T_C = -40°C
T_C = 25°C
2·5 ^{TC = 100°C}
2·0
1·5
1·0
I_B = I_C / 100
t_p = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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