BD743 Datasheet, PDF (3/5 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCS637AA
T_C = 125°C
T_C = 25°C
T_C = -55°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
I_C
I_B
= 10
TCS637AB
t_p = 300µs, duty cycle < 2%
1·0
V_CE = 4 V
t_p = 300 µs, duty cycle < 2%
10
0·1
1·0
10
I_C - Collector Current - A
Figure 1.
0·1
0·01
100
0·1
T_C = -55°C
T_C = 25°C
T_C = 125°C
1·0
10
100
I_C - Collector Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
10
TCS637AC
V_CE = 4 V
t_p = 300µs, duty cycle < 2%
1·0
0·1
0·1
T_C = -55°C
T_C = 25°C
T_C = 125°C
1·0
10
100
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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