TISP821XMD Datasheet, PDF (2/6 Pages) Bourns Electronic Solutions – COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

TISP821xMD Overvoltage Protectors
Description
The TISP8210MD / TISP8211MD protector combination has been designed to protect dual polarity supply rail SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been
designed using the latest understanding of programmable protector technology to maximize performance.
The TISP8210MD and TISP8211MD are complementary programmable protection devices. The program or gate pins (G1, G2) are connected to
the positive and negative SLIC battery supplies to give protection which will track the SLIC supply levels. The integrated transistor buffer is an
essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or
power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary
loading of the power supply.
The TISP8210MD / TISP8211MD combination is designed to be used in conjunction with the 12.5 Ω Bourns^® 4A12P-1AH-12R5 Line
Protection Module (LPM). With this solution the application should pass Telcordia GR-1089-CORE testing with the 4A12P-1AH-12R5 acting as
the overcurrent protector and coordination element.
The TISP^® device plus LPM solution is designed to work in harmony with the system primary protectors. GR-1089-CORE issue 3 lists test to
allow for three types of primary protection: Carbon Block (1000 V); Gas Discharge Tube (600 V) and Solid State (400 V). This solution is
designed to be used with the GDT and Solid State options. Under lightning conditions the current through the 12.5 Ω LPM will be 48 A (600 V /
12.5 Ω), which is well within the 60 A capability of the TISP8210MD / TISP8211MD combination.
How to Order
Device
TISP8210MD
TISP8211MD
Package
8-SOIC
Carrier
Embossed Tape Reeled
For Lead-Free
Termination Finish
Order As
TISP8210MDR-S
TISP8211MDR-S
Marking Code
8210M
8211M
Standard Quantity
2500
TISP8210MD Absolute Maximum Ratings, T_A = 25 °C
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V_GK = 0
Repetitive peak reverse voltage, V_GA = -70 V
Non-repetitive peak impulse current (see Note 1)
V_DRM
-120
V
V_RRM
120
2/10 μs (Telcordia GR-1089-CORE, 2/10 μs voltage wave shape)
5/310 μs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/1000 μs (Telcordia GR-1089-CORE, 10/1000 μs voltage wave shape)
-167
I_PPSM
-70
A
-60
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2)
100 ms
1s
5s
300 s
900 s
I_TSM
-11
-6.5
-3.4
A
-1.4
-1.3
Junction temperature
Storage temperature range
T_J
-55 to +150 °C
T_stg
-65 to +150 °C
NOTES: 1. Initially the protector must be in thermal equilibrium with T_J = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive
current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.