TISP4CXXXH3BJ Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
Non-repetitive peak impulse current (see Notes 1 and 2)
'4C125H3BJ
±100
'4C145H3BJ
±120
'4C180H3BJ
±145
'4C220H3BJ
'4C250H3BJ
V_DRM
±180
±190
V
'4C290H3BJ
±220
'4C350H3BJ
±275
'4C395H3BJ
±320
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
±500
±200
I_PPSM
±150
A
±100
±100
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
I_TSM
30
2.1
A
Junction temperature
Storage temperature range
T_J
-40 to +150 °C
T_stg
-65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with T_J = 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
I_DRM
Repetitive peak off-state current V_D = V_DRM
V_(BO)
Breakover voltage
dv/dt = ±250 V/ms, R_SOURCE = 300 Ω
V_(BO)
I_(BO)
V_T
I_H
Impulse breakover voltage
Breakover current
On-state voltage
Holding current
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±10 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±250 V/ms, R_SOURCE = 300 Ω
I_T = ±5 A, t_w = 100 µs
I_T = ±5 A, di/dt = ±30 mA/ms
C_O
Off-state capacitance
f = 1 MHz, V_d = 1 V rms, V_D = -2 V
Min
T_A = 25 °C
T_A = 85 °C
'4C125H3BJ
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
Typ Max Unit
±5
±10
µA
±125
±145
±180
±220
±250 ^V
±290
±350
±395
'4C125H3BJ
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±150
'4C125H3BJ
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±135
±155
±190
±230
±260 ^V
±300
±360
±405
±600 mA
±3 V
±600 mA
50
45
pF
40
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.