TISP3240F3_08 Datasheet, PDF (2/12 Pages) Bourns Electronic Solutions – HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP3xxxF3 (HV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, 0 °C < T_A < 70 °C
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 °C < T_A < 70 °C (see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
Symbol
V_DRM
I_PPSM
I_TSM
di_T/dt
T_J
T_stg
Value
Unit
±180
±200
±220
V
±240
±270
350
175
90
120
60
55
38
50
50
45
35
4.3
250
-65 to +150
-65 to +150
A
A
A/µs
°C
°C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP^® device m ust be in thermal equilibrium with 0 °C < T_J <70 °C. The surge may be repeated after the TISP^® device
returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, TA = 25 °C (Unless Otherwise Noted)
I_DRM
I_D
C_off
Parameter
Repetitive peak off-
state current
Off-state current
Off-state capacitance
Test Conditions
V_D = ±2V_DRM, 0 °C < T_A < 70 °C
V_D = ±50 V
f = 100 kHz, V_d = 100 mV , V_D = 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
Min Typ Max Unit
±10
µA
±10
µA
0.05 0.15
pF
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.