TIP42-S Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – PNP SILICON POWER TRANSISTORS

TIP42, TIP42A, TIP42B, TIP42C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
Collector-emitter
I_{CES cut-off current}
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE
h_fe
|h_fe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I_C = -30 mA
(see Note 5)
V_CE = -80 V
V_CE = -100 V
V_CE = -120 V
V_CE = -140 V
V_CE = -30 V
V_CE = -60 V
V_EB = -5 V
V_CE = -4 V
V_CE = -4 V
I_B = -0.6 A
V_CE = -4 V
V_CE = -10 V
V_CE = -10 V
I_B = 0
V_BE = 0
V_BE = 0
V_BE = 0
V_BE = 0
I_B = 0
I_B = 0
I_C = 0
I_C = -0.3 A
I_C = - 3A
I_C = -6 A
I_C = -6 A
I_C = -0.5 A
I_C = -0.5 A
TIP42
-40
TIP42A
-60
TIP42B
-80
TIP42C
-100
TIP42
-0.4
TIP42A
-0.4
TIP42B
-0.4
TIP42C
-0.4
TIP42/42A
-0.7
TIP42B/42C
-0.7
-1
30
(see Notes 5 and 6)
15
75
(see Notes 5 and 6)
-1.5
(see Notes 5 and 6)
-2
f = 1 kHz
20
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.92 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on Turn-on time
t_off
Turn-off time
I_C = -6 A
V_BE(off) = 4 V
I_B(on) = -0.6 A
R_L = 5 Ω
I_B(off) = 0.6 A
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.4
µs
0.7
µs
PRODUCT INFORMATION
2
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.