TIP31B-S Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – Designed for Complementary Use with the TIP32 Series

TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP31
40
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = 30 mA
(see Note 5)
I_B = 0
TIP31A
60
TIP31B
80
TIP31C
100
V_CE = 80 V
V_BE = 0
TIP31
0.2
Collector-emitter
I_{CES cut-off current}
V_CE = 100 V
V_CE = 120 V
V_BE = 0
V_BE = 0
TIP31A
TIP31B
0.2
0.2
V_CE = 140 V
V_BE = 0
TIP31C
0.2
I_CEO
Collector cut-off
current
V_CE = 30 V
V_CE = 60 V
I_B = 0
I_B = 0
TIP31/31A
TIP31B/31C
0.3
0.3
Emitter cut-off
I_{EBO current}
V_EB = 5 V
I_C = 0
1
Forward current
h_FE
transfer ratio
V_CE = 4 V
V_CE = 4 V
I_C = 1 A
I_C = 3 A
25
(see Notes 5 and 6)
10
50
Collector-emitter
V_{CE(sat) saturation voltage}
I_B = 375 mA
I_C = 3 A
(see Notes 5 and 6)
1.2
Base-emitter
V_BE
voltage
V_CE = 4 V
I_C = 3 A
(see Notes 5 and 6)
1.8
Small signal forward
h_fe
current transfer ratio ^{VCE = 10 V}
I_C = 0.5 A
f = 1 kHz
20
|h_fe|
Small signal forward
current transfer ratio
V_CE = 10 V
I_C = 0.5 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on Turn-on time
t_off
Turn-off time
I_C = 1 A
V_BE(off) = -4.3 V
I_B(on) = 0.1 A
R_L = 30 Ω
I_B(off) = -0.1 A
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.5
µs
2
µs
PRODUCT INFORMATION
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.