TIP122-S Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – NPN SILICON POWER DARLINGTONS

TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperatur e
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_CEO
Collector-emitter
cut-off current
I_CBO
Collector cut-off
current
I_EBO
h_FE
V_CE(sat)
V_BE
V_EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I_C = 30 mA
(see Note 5)
V_CE = 30 V
V_CE = 40 V
V_CE = 50 V
V_CB = 60 V
V_CB = 80 V
V_CB = 100 V
V_EB = 5 V
V_CE = 3 V
V_CE = 3 V
I_B = 12 mA
I_B = 20 mA
V_CE = 3 V
I_E = 5 A
I_B = 0
I_B = 0
I_B = 0
I_B = 0
I_E = 0
I_E = 0
I_E = 0
I_C = 0
I_C = 0.5 A
I_C = 3 A
I_C = 3 A
I_C = 5 A
I_C = 3 A
I_B = 0
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
60
80
100
0.5
0.5
0.5
0.2
0.2
0.2
2
(see Notes 5 and 6)
1000
1000
2
(see Notes 5 and 6)
4
(see Notes 5 and 6)
2.5
(see Notes 5 and 6)
3.5
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.92 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on Turn-on time
t_off
Turn-off time
I_C = 3 A
V_BE(off) = -5 V
I_B(on) = 12 mA
R_L = 10 Ω
I_B(off) = -12 mA
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
1.5
µs
8.5
µs
PRODUCT INFORMATION
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.