TIP120-S Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – NPN SILICON POWER DARLINGTONS

TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperatur e
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP120
60
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = 30 mA
I_B = 0
TIP121
80
(see Note 5)
TIP122
100
Collector-emitter
V_CE = 30 V
I_B = 0
TIP120
0.5
I_{CEO cut-off current}
V_CE = 40 V
I_B = 0
TIP121
0.5
V_CE = 50 V
I_B = 0
TIP122
0.5
Collector cut-off
V_CB = 60 V
I_E = 0
TIP120
0.2
I_{CBO current}
V_CB = 80 V
I_E = 0
TIP121
0.2
V_CB = 100 V
I_E = 0
TIP122
0.2
Emitter cut-off
I_{EBO current}
V_EB = 5 V
I_C = 0
2
h_FE
V_CE(sat)
V_BE
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
V_CE = 3 V
V_CE = 3 V
I_B = 12 mA
I_B = 20 mA
V_CE = 3 V
I_C = 0.5 A
I_C = 3 A
I_C = 3 A
I_C = 5 A
I_C = 3 A
(see Notes 5 and 6)
1000
1000
2
(see Notes 5 and 6)
4
(see Notes 5 and 6)
2.5
OBSOLETE ^{Parallel diode}
V_{EC forward voltage}
I_E = 5 A
I_B = 0
(see Notes 5 and 6)
3.5
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX
1.92
62.5
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t_on Turn-on time
t_off
Turn-off time
I_C = 3 A
V_BE(off) = -5 V
TEST CONDITIONS ^†
I_B(on) = 12 mA
R_L = 10 Ω
I_B(off) = -12 mA
t_p = 20 µs, dc ≤ 2%
MIN TYP MAX
1.5
8.5
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
UNIT
V
mA
mA
mA
V
V
V
UNIT
°C/W
°C/W
UNIT
µs
µs
PRODUCT INFORMATION
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.