TIC106DS Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – SILICON CONTROLLED RECTIFIERS

TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
I_DRM
I_RRM
I_GT
V_GT
I_H
V_T
dv/dt
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state
voltage
Critical rate of rise of
off-state voltage
V_D = rated V_DRM
V_R = rated V_RRM
V_AA = 12 V
V_AA = 12 V
t_p(g) ≥ 20 µs
V_AA = 12 V
t_p(g) ≥ 20 µs
V_AA = 12 V
t_p(g) ≥ 20 µs
V_AA = 12 V
Initiating I_T = 10 mA
V_AA = 12 V
Initiating I_T = 10 mA
I_T = 5 A
V_D = rated V_D
R_GK = 1 kΩ
I_G = 0
R_L = 100 Ω
R_L = 100 Ω
R_GK = 1 kΩ
R_L = 100 Ω
R_GK = 1 kΩ
R_L = 100 Ω
R_GK = 1 kΩ
R_GK = 1 kΩ
R_GK = 1 kΩ
(See Note 6)
R_GK = 1 kΩ
T_C = 110°C
T_C = 110°C
t_p(g) ≥ 20 µs
T_C = - 40°C
T_C = 110°C
T_C = - 40°C
T_C = 110°C
400
µA
1
mA
5
200
µA
1.2
0.4 0.6
1
V
0.2
8
mA
5
1.7
V
10
V/µs
NOTE 6: This parameter must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.5 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.