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PTVS3-058C-SH-R Datasheet, PDF (2/3 Pages) Bourns Electronic Solutions – High Current TVS Diodes
PTVS3-xxxC-SH Series High Current TVS Diodes
Performance Graphs
V-I Characteristic
Typical VBR vs. Junction Temperature
16
14
12
10
8
6
25 °C
4
2
0
-4
-6
-8
-40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (TJ) - °C
Typical Surge Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125 150
175
Ambient Temperature (°C)
This graph shows the typical device surge current derating
versus ambient temperature when subjected to the 8/20 µs
current waveform per the IEC 61000-4-5 specification.
This device is not intended for continuous operation at
temperatures above 125 °C.
Current 8/20 µs Waveform per IEC 61000-4-5
120
Test Waveform Parameters
100
tt
tt = 8 µs
td = 20 µs
80
et
60
40
| td = t IPP/2
20
0
0
5
10 15 20 25 30
t – Time (µs)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.